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Interface formation between deposited Sn and Hg(0,8)Cd(0,2)Te

Grenzflächenbildung zwischen aufgedampftem Sn und Hg(0,8)Cd(0,2)Te


Journal of Electronic Materials 25 (1996), No.8, pp.1293-1299
ISSN: 0361-5235
ISSN: 1543-186X
Journal Article
Fraunhofer IAF ()
Alpha-Sn; ARXPS depth profiling; ARXPS Tiefenprofil; ohmic contacts; Ohmscher Kontakt; photoelectron diffraction; Photoelektronen-Beugung

The structure of the interface formed by the reaction of deposited Sn on Hg(0.78)Cd(0.22)Te(111)B was investigated by hemispherically scanned x-ray photo-electron spectroscopy including x-ray photoelectron diffraction (XPD). The interface formation was found to proceed as follows: At the onset of Sn deposition, Hg is expelled and substituted by Sn in the topmost monolayer of the Hg(0.78)Cd(0.22)Te lattice while the zinc-blende structure of the original surface is maintained. With further Sn deposition (and further loss of Hg), an epitaxial layer of cubic SnTe (with inclusions of CdTe) was found to grow. At room temperature, the SnTe growth stopped after a few monolayers, and the epitaxial growth of cubic alpha-Sn was observed to start on top of it. At elevated deposition temperatures, the SnTe intermediate layer continued to grow up to several l00 A.U.