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Interface formation and surface Fermi level pinning in GaSb and InSb grown on GaAs by molecular beam epitaxy

Bildung von Grenzflächen und Lage des Fermi-Niveaus an der Oberfläche in GaSb und InSb aufgewachsen auf GaAs mittels Molekularstrahl-Epitaxie

: Wagner, J.; Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.

	Rupprecht, H.S.; Weimann, G.: Gallium arsenide and related compounds 1993. Proceedings Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136) ISBN: 0-7503-0295-X pp.709-714 : Abb.,Lit.
	International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>

	English
	Conference Paper
	Fraunhofer IAF ()
	GaSb/GaAs; Grenzfläche; InSb/GaAs; interface; molecular beam epitaxy; Molekularstrahlepitaxie; Oberfläche; surface

Abstract
We have used resonant Raman scattering by longitudinal optical (LO) phonons to analyze GaSb/GaAs and InSb/GaAs interfaces for GaSb and InSb grown on (100) GaAs by molecular-beam epitaxy. Striking differences with respect to the abruptness of the interface and the minimum layer thickness required to achieve a good crystalline quality were found. Further, the position of the Fermi level at the surface of epitaxial InSb has been studied by electric-field-induced LO phonon scattering.

: http://publica.fraunhofer.de/documents/PX-19665.html