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1994
Conference Paper
Title
Interface formation and surface Fermi level pinning in GaSb and InSb grown on GaAs by molecular beam epitaxy
Other Title
Bildung von Grenzflächen und Lage des Fermi-Niveaus an der Oberfläche in GaSb und InSb aufgewachsen auf GaAs mittels Molekularstrahl-Epitaxie
Abstract
We have used resonant Raman scattering by longitudinal optical (LO) phonons to analyze GaSb/GaAs and InSb/GaAs interfaces for GaSb and InSb grown on (100) GaAs by molecular-beam epitaxy. Striking differences with respect to the abruptness of the interface and the minimum layer thickness required to achieve a good crystalline quality were found. Further, the position of the Fermi level at the surface of epitaxial InSb has been studied by electric-field-induced LO phonon scattering.
Author(s)