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Interface characterization by C-V- measurements of three-terminal MOSOS capacitors

: Abel, H.B.; Badenes, G.


Institute of Electrical and Electronics Engineers -IEEE-:
International SOI Conference '91. Proceedings
New York/N.Y.; Piscataway/N.J., 1991
ISBN: 0-7803-0184-6
International SOI Conference <1991, Vail Valley/Colo.>
Conference Paper
Fraunhofer IMS ()
CM measurement; film thickness; interface characterization; silicon-on-insulator; surface state

A method is presented which allows the separate characterization of the two interfaces in the SOI MOS structure. It is based on the idea that the influence of the back interface properties on the front interface can be controlled by application of a corresponding back gate voltage. Simulation results underline the validity of this theory. The simplicity and the accuracy of the measurement procedure are demonstrated by a comprehensive measurement example.