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Interaction ruled temperature dependence of the electron cyclotron mass in GaAs heterojunctions

Wechselwirkungsbestimmte Temperaturabhängigkeit der Elektron-Zyklotronmasse in GaAs-Heteroübergängen
: Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.


Physica. B 249-251 (1998), pp.749-752
ISSN: 0921-4526
Journal Article
Fraunhofer IAF ()
electrical measurement; elektrische Messung; III-V Halbleiter; III-V semiconductor; Quantenfilm; quantum wells

Cyclotron resonance of inversion layer electrons in GaAs was studied from liquid helium temperatures up to 110 K for densities smaller than 10(exp11)cm(-2) . A continuous red shift of the resonance position was observed with increasing temperature. A quantitative analysis of the experiment demonstrates that electron-electron interactions which introduce a coupling of the electrical dipole transitions between the Landau levels are responsible for this shift.