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Interaction coupled cyclotron transitions of two-dimensional electron systems in GaAs at high temperatures

Wechselwirkungsgekoppelte Zyklotron-Übergäng eines zweidimensionalen Elektronengas Systems in GaAs bei hohen Temperaturen
 
: Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.

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Physical review letters 75 (1995), No.5, pp.918-921 : Abb.,Lit.
ISSN: 0031-9007
English
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; quantum wells; two-dimensional electrongas; zweidimensionales Elektronengas

Abstract
We report here the first observation of the cyclotron resonance Landau splitting for low density electron inversion layers in Alx Ga1-x As-GaAs heterojunctions. Even at temperatures close to 100 K electron-electron interactions couple the electrical dipole transitions from the ground and first excited Landau levels, with a coupling strength comparable to the one found at liquid helium temperatures. The experiment can be explained only in a single-particle approximation at sufficiently low densities and/or magnetic field strengths where the resonant polaron effect is important.

: http://publica.fraunhofer.de/documents/PX-19570.html