Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Inter-valley scattering and electric field domains in quantum well infrared photodetectors

Inter-Valley-Streuung und elektrische Felddomänen in Quantumwell-Infrarot-Photodetektoren

Li, S.S. ; Electrochemical Society -ECS-, Dielectric Science and Technology Division; Electrochemical Society -ECS-, Electronics Division; Electrochemical Society -ECS-, Luminescent and Display Materials Division:
Long wavelength infrared detectors and arrays. Physics and applications. Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays
Pennington,NJ: ECS, 1999 (Electrochemical Society. Proceedings 98-21)
ISBN: 1-566-77215-X
pp.206-218 : Ill., Lit.
International Symposium on Long Wavelength Infrared Detectors and Arrays <6, 1998, Boston/Mass.>
Conference Paper
Fraunhofer IAF ()
electric field domain; elektrische Felddomän; GaAs/AlGaAs; inter-valley scattering; Inter-Valley-Streuung; quantum well infrared photodetector; QWIP

We report on the formation of electric field domains induced by the bound-to-continuum photocurrent in n-type GaAs/AlGaAs multiple quantum wells. Domain formation is caused by a negative differential photoconductivity, which arises from inter-valley scattering processes. The domain structure is only observed under illumination, since the thermally excited carrier density increases strongly with increasing electric field, while the optical excitation rate remains constant. The signature of electric field domains, i. e., a plateau-like behavior of the total current under illumination, Is most clearly seen If the interference of the infrared illumination is suppressed by using devices which are only partially covered with metal.