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  4. Inter-valley scattering and electric field domains in quantum well infrared photodetectors
 
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1999
Conference Paper
Title

Inter-valley scattering and electric field domains in quantum well infrared photodetectors

Other Title
Inter-Valley-Streuung und elektrische Felddomänen in Quantumwell-Infrarot-Photodetektoren
Abstract
We report on the formation of electric field domains induced by the bound-to-continuum photocurrent in n-type GaAs/AlGaAs multiple quantum wells. Domain formation is caused by a negative differential photoconductivity, which arises from inter-valley scattering processes. The domain structure is only observed under illumination, since the thermally excited carrier density increases strongly with increasing electric field, while the optical excitation rate remains constant. The signature of electric field domains, i. e., a plateau-like behavior of the total current under illumination, Is most clearly seen If the interference of the infrared illumination is suppressed by using devices which are only partially covered with metal.
Author(s)
Schneider, H.
Schönbein, C.
Mermelstein, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rehm, Robert  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Sa'ar, A.
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Long wavelength infrared detectors and arrays. Physics and applications. Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays  
Conference
International Symposium on Long Wavelength Infrared Detectors and Arrays 1998  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • electric field domain

  • elektrische Felddomän

  • GaAs/AlGaAs

  • inter-valley scattering

  • Inter-Valley-Streuung

  • quantum well infrared photodetector

  • QWIP

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