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An intelligent 600 V vertical IGBT on SIMOX substrate

 
: Mütterlein, B.; Vogt, F.P.; Weyers, J.; Vogt, H.

Borel, J.; Gentil, P.; Noblanc, J.P.; Nouailhat, A.; Verdone, M.:
ESSDERC '93. 23rd European Solid State Device Research Conference. Proceedings
Gif-sur-Yvette Cedex: Editions Frontieres, 1993
ISBN: 2-86332-135-8
pp.879-882 : Lit.
European Solid State Device Research Conference <23, 1993, Grenoble>
English
Conference Paper
Fraunhofer IMS ()
IGBT; insulated-gate bipolar transistor; Leistungselektronik; Leistungstransistor; power integrated circuit; SIMOX; smart power ICs; Smart-power-Technik; smart power technology

Abstract
This paper describes a smart power device which uses a vertical 600 V, 10 A IGBT as a power switch and a signal and control circuit fabricated with a 2 mym SOI-CMOS technology. The dielectric isolation between the IGBT and the control circuit is formed by SIMOX (separation by implanted oxygen) and LOCOS technology. A self protection is achieved by measuring load current and device temperature. The protection is provided by analog and digital CMOS circuits with a supply voltage of 10 V. This device is used as an intelligent switch in a full bridge circuit for motor control.

: http://publica.fraunhofer.de/documents/PX-19486.html