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An intelligent 500 V power vertical DMOS on SIMOX substrate. Part 2

 
: Mütterlein, B.; Vogt, F.P.; Vogt, H.

Bailey, W.E. ; Electrochemical Society -ECS-:
Fifth International Symposium on Silicon-on-insulator technology and devices '92. Proceedings
Pennington/N.J., 1992 (Electrochemical Society. Proceedings 92-6)
ISBN: 1-56677-013-0
pp.77-88
International Symposium on Silicon-on-Insulator Technology and Devices <5, 1992, St. Louis/Mo.>
English
Conference Paper
Fraunhofer IMS ()
dielectric insulation; HVDMOS; Leistungshalbleiterbauelement; semiconductor power device; silicon-on-insulator; SIMOX; Smart-power-Technik; smart-power technology; SOI

Abstract
High voltage smart power IC's need dielectric insulation to make high voltage switching possible without influencing the low voltage part. Locally applied SIMOX is used to isolate a 2 fm CMOS process from a vertical 500 V, 10 A HVDMOS transistor. Additional field shielding eliminates any cross talk during switching. A 15 mask process gives circuits for motor control or off-line applications.

: http://publica.fraunhofer.de/documents/PX-19485.html