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Insitu post deposition anneal of rapid thermal chemical vapor deposited titanium nitride

: Fröschle, B.; Leutenecker, R.; Cao-Minh, U.; Ramm, P.

RTP '94. 2nd International Rapid Thermal Processing Conference. Proceedings : Votrag
ISBN: 0-9638251-2-7
International Rapid Thermal Processing Conference <2, 1994, Montreal>
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
insitu annealing; RTCVD; TiN; TiN sub x Cl sub y; titanium nitride

Titanium nitride films are deposited using titanium (IV) chloride and ammonia. The aim is to develop a low temperature CVD process with a low contamination content in the films. We achieve this by an insitu post deposition annealing step. Different contents of chlorine and oxygen are observed for as deposited samples and post annealed films using different annealing gases. The composition is extremely dependent on the chemical reactivity and behavior of the annealing gases. Annealing in ammonia leads to films with an extremely low chlorine content (< 1.5 at.%), while the silane/hydrogen annealing leads to a very low oxygen content. The films show a polycrystalline structure, if the deposition is carried out at temperatures below 350 Cel. Titanium nitride films, deposited and annealed at 450 Cel show a step coverage of nearly 100 % and an excellent yield concerning to barrier failures, referring to aluminum at temperatures up to 550 Cel. With regard to the low fabrication temperature an d the low chlorine content, this newly developed process can be used for barrier application in multilayer metallization in ULSI technology.