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Input voltage sensitivity of GaAs/GaAlAs HEMT latched comparator

 
: Feng, S.; Seitzer, D.

:

Electronics Letters 28 (1992), No.3, pp.233-235
ISSN: 0013-5194
English
Journal Article
Fraunhofer IIS A ( IIS) ()
circuit design; circuit theory; comparator; gallium arsenide; Galliumarsenid; Komparator; Schaltungsentwurf; Schaltungstheorie

Abstract
The input voltage sensitivity represents a critical parameter for a latched comparator in high-speed and high-precision data conversion applications. An analytical prediction of this parameter is presented and it has been verified to be in good agreement with the experimental results from a high performance latched comparator implemented in 0.5 mu m GaAs/GaAlAs E/D HEMT technology.

: http://publica.fraunhofer.de/documents/PX-18982.html