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1990
Journal Article
Titel
Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide
Alternative
Infrarotspektren und Elektronen Spin Resonanz von tiefen Vanadium Störstellen in Siliziumkarbid
Abstract
Trace impurities of vanadium in Lely-grown silicon carbide single crystals have been detected by their strong, polytype-specific photoluminescence in the 1.3-1.5 mym near-infrared spectral rang, as well as by infrared absorption. A high 0/A high-, and possibly also as a deep donor. The role of vanadium as minority-carrier lifetime killer in SiC-based optoelectronic devices is suggested from these data.
Author(s)