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  4. Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers
 
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1997
Conference Paper
Title

Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers

Other Title
Einfluß der epitaktischen Schichten auf die Strahlqualität von Halbleiter Trapezverstärkern
Abstract
In the last years, very good results have been demonstrated in the field of high power diffraction limited tapered semiconductor lasers and amplifiers. However, to our knowledge, no work was reported on the correlation between the epi-structure and the beam quality. In this paper, we discuss the reasons why different epitaxial layers are not equivalent from the beam quality point of view. We then report measurements made on semiconductor amplifiers of different wafers showing that the choice of the epitaxial structure is crucial to obtain good beam quality.
Author(s)
Chazan, P.
Morgott, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bihlmann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Moritz, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Daleiden, J.
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
LEOS '97. 10th Annual Meeting. Conference proceedings. Vol. 2  
Conference
IEEE Lasers and Electro-Optics Society (Annual Meeting) 1997  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • beam epitaxy

  • Strahlqualität

  • tapered amplifiers

  • trapezförmige Verstärker

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