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1990
Journal Article
Titel
Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV-VI compounds.
Alternative
Einfluß der BaF2 Substratpräparation auf die strukturelle Perfektion von epitaktisch gewachsenen IV-VI-Verbindungen
Abstract
The influence of preheating time and temperature of (111) oriented BaF2 substrates on the crystalline epitaxial perfection of 4 - 6 film growth is investigated by in situ reflection high energy electron diffraction, and after growth, by X-ray diffraction and electron channelling patterns. A preheating temperature of 500 degree C for 10 min yields excellent epitaxial film relation ship and perfect overgrowth.