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  4. Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV-VI compounds.
 
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1990
Journal Article
Title

Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV-VI compounds.

Other Title
Einfluß der BaF2 Substratpräparation auf die strukturelle Perfektion von epitaktisch gewachsenen IV-VI-Verbindungen
Abstract
The influence of preheating time and temperature of (111) oriented BaF2 substrates on the crystalline epitaxial perfection of 4 - 6 film growth is investigated by in situ reflection high energy electron diffraction, and after growth, by X-ray diffraction and electron channelling patterns. A preheating temperature of 500 degree C for 10 min yields excellent epitaxial film relation ship and perfect overgrowth.
Author(s)
Clemens, H.
Voiticek, A.
Holzinger, A.
Bauer, G.
Journal
Journal of Crystal Growth  
DOI
10.1016/0022-0248(90)90863-G
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • BaF2

  • epitaxy

  • Halbleiter

  • IV-VI compound

  • IV-VI-Verbindung

  • molecular beam

  • Molekularstrahlepitaxie

  • semiconductor

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