• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Influence of substrate dislocations on epitaxial layers studied by photoluminescence microscopy and topography
 
  • Details
  • Full
Options
1994
Conference Paper
Title

Influence of substrate dislocations on epitaxial layers studied by photoluminescence microscopy and topography

Other Title
Einfluß von Substratversetzungen auf epitaktische Schichten untersucht durch Photolumineszenz-Mikroskopie und -Topographie
Abstract
Nonradiative recombination centers in epitaxial heterostructures are studied with spectrally selective photoluminescence microscopy (PLM). Characteristic patterns of the dislocation density distribution in GaAs substrates are reproduced in the PLM images of quantum wells and buffer layers. The onset of strain relaxation in InGaAs/GaAs multiple quantum well (MQW) lasers is observed to depend on the number of quantum wells, substrate dislocations and doping of the MQWs. Line defects along two different low index crystal orientations are observed.
Author(s)
Baeumler, Martina  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Larkins, E.C.
Bachem, K.H.
Bernklau, D.
Riechert, H.
Ralston, J.D.
Jantz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Defect recognition and image processing in semiconductors and devices. Proceedings  
Conference
International Conference on Defect Recognition and Image Processing in III-V Compounds 1993  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs epitaktische Schicht

  • GaAs epitaxial layer

  • substrate dislocation

  • Substratversetzung

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024