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Influence of substrate dislocations on epitaxial layers studied by photoluminescence microscopy and topography

Einfluß von Substratversetzungen auf epitaktische Schichten untersucht durch Photolumineszenz-Mikroskopie und -Topographie

Jimenez, J. ; Institute of Physics -IOP-, London:
Defect recognition and image processing in semiconductors and devices. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 135)
ISBN: 0-7503-0294-1
International Conference on Defect Recognition and Image Processing in III-V Compounds <5, 1993, Santander>
Conference Paper
Fraunhofer IAF ()
GaAs epitaktische Schicht; GaAs epitaxial layer; substrate dislocation; Substratversetzung

Nonradiative recombination centers in epitaxial heterostructures are studied with spectrally selective photoluminescence microscopy (PLM). Characteristic patterns of the dislocation density distribution in GaAs substrates are reproduced in the PLM images of quantum wells and buffer layers. The onset of strain relaxation in InGaAs/GaAs multiple quantum well (MQW) lasers is observed to depend on the number of quantum wells, substrate dislocations and doping of the MQWs. Line defects along two different low index crystal orientations are observed.