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The influence of post-exposure bake on linewidth control for the resist system RAY-PN-AZPN 100- in X-ray mask fabrication

 
: Chlebek, J.; Schulz, T.; Grimm, J.; Huber, H.-L.

Journal of vacuum science and technology B. Microelectronics and nanometer structures 9 (1991), No.6, pp.3392-3398
ISSN: 0734-211X
ISSN: 1071-1023
International Symposium on Electron, Ion and Photon Beams <35, 1991, Seattle/Wash.>
English
Conference Paper
Fraunhofer ISIT ()
masks; photoresists; semiconductor technology; X-ray lithography

Abstract
Statistically designed experiments for optimization in processing the high sensitive negative tone Hoechst resist RAY-PN (AZ PN 100) were used to establish robust processes for two different applications of the resist: (1) pattern replication on a wafer and (2) during the mask copy process under 40-mbar He environment via X - ray lithography . Minimization of linewidth change with respect to a 1:1 pattern transfer was achieved through manipulation of the following variables: exposure dose, post-exposure bake (PEB) time and temperature, and development time. A two-stage sequential strategy was employed. After specifying the response and the primary variables, the first stage of the sequential approach was based on a full factorial design. In the second stage, the influence of PEB parameters for wafers as well as for X-ray mask blanks were studied using a central composite design. Finally, the response surfaces for the pattern replication on X-ray mask blanks are demonstrated and the opt imal process parameter set for a linewidth control within 50 nm for 0.5- to 3.0- mu m feature size values are given.

: http://publica.fraunhofer.de/documents/PX-18479.html