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  4. The influence of point defect concentration on the diffusion of gold in silicon
 
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1989
Conference Paper
Title

The influence of point defect concentration on the diffusion of gold in silicon

Other Title
Der Einfluß von Punktdefekt-Konzentrationen auf die Diffusion von Gold in Silicon
Abstract
The diffusion of gold in silicon is described by the kick-out and dissociative mechanism. The resulting set of four coupled partial differential equations is completely solved numerically. Splitting the self-diffusion coefficients, we find that the gold is strongly influenced by the equilibrium concentrations of point-defects. As a result of our work, we can give an upper boundary for the value of the equilibrium concentrations of vacancies and a lower boundary for the diffusivity of vacancies.
Author(s)
Zimmermann, H.
Pichler, P.  orcid-logo
Mainwork
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings  
Conference
European Solid State Device Research Conference 1989  
Language
English
IIS-B  
Keyword(s)
  • Gold-Diffusion in Silicon

  • point defects

  • Punktdefekt

  • simulation

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