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The influence of point defect concentration on the diffusion of gold in silicon

Der Einfluß von Punktdefekt-Konzentrationen auf die Diffusion von Gold in Silicon
 
: Zimmermann, H.; Pichler, P.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
pp.287-290
European Solid State Device Research Conference <19, 1989, Berlin>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()
Gold-Diffusion in Silicon; point defects; Punktdefekt; simulation

Abstract
The diffusion of gold in silicon is described by the kick-out and dissociative mechanism. The resulting set of four coupled partial differential equations is completely solved numerically. Splitting the self-diffusion coefficients, we find that the gold is strongly influenced by the equilibrium concentrations of point-defects. As a result of our work, we can give an upper boundary for the value of the equilibrium concentrations of vacancies and a lower boundary for the diffusivity of vacancies.

: http://publica.fraunhofer.de/documents/PX-18477.html