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1990
Journal Article
Titel
Influence of plasma and ion beams on the electrical properties on n-GaAs Schottky diodes.
Alternative
Einfluss von Plasma und Ionenstrahlen auf die elektrischen Eigenschaften von n-GaAs Schottkydioden
Abstract
The residual variations in the electrical properties of n-GaAs Schottky contacts due to reactive ion etching (RIE) of GaAs have been examined as a function of over-etch time by I-V and C-V measurements. For this purpose, rather soft RIE conditions closely related to those applied in our device fabriction scheme have been used. Our results prove that only small changes of barrier height (about 30 mV), ideality factor, and zero bias capacitance occur due to soft RIE. Also the doping profiles as determined by C-V measurements at negative bias voltages do not show any degradation. The most prominent and appreciable features caused by the RIE process are the decrease of leakage current by a factor of 2-3 accompanied by an increase of breakdown voltage at about 0.5 V. This observation implies an appreciable improvement of the Schotty gate of GaAs-FET devices.