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Influence of layout and packaging on the temperature of GaAs power PHEMTs

Einfluß von Layout und Aufbautechnik auf die Temperatur von GaAs Leistungs-PHEMT
: Marsetz, W.; Dammann, M.; Kawashima, H.; Rüdiger, J.; Matthes, B.; Hülsmann, A.; Schlechtweg, M.


Freeman, M.:
28th European Microwave Conference 1998. Conference proceedings. Vol.2
Amsterdam, 1998
European Microwave Conference (EuMC) <28, 1998, Amsterdam>
Conference Paper
Fraunhofer IAF ()
PHEMT; Temperatur; temperature

The influence of device layout and packaging on transistor temperature was investigated. The operating temperatures of GaAs power PHEMTs were measured with integrated temperature sensors from 20 - 200 deg C with an accuracy of a few degrees. The measured data are in very good agreement with our three-dimensional simulation results. Thus, reliable prediction on the effect of packaging and layout details on device temperature is possible.