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1998
Conference Paper
Titel
Influence of layout and packaging on the temperature of GaAs power PHEMTs
Alternative
Einfluß von Layout und Aufbautechnik auf die Temperatur von GaAs Leistungs-PHEMT
Abstract
The influence of device layout and packaging on transistor temperature was investigated. The operating temperatures of GaAs power PHEMTs were measured with integrated temperature sensors from 20 - 200 deg C with an accuracy of a few degrees. The measured data are in very good agreement with our three-dimensional simulation results. Thus, reliable prediction on the effect of packaging and layout details on device temperature is possible.
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