The influence of ion scattering on dry etch profiles

A simulation study is presented using a new version of the simulation program ADEPT (Advanced simulation of Dry-Etching Process Technology), which is a subset of the process simulator COMPOSITE. Based on some aspects of plasma physics, a model was developed which allows for the calculation of important properties of a collisional sheath by Monte Carlo methods. These properties have a great influence on the anisotropy of a dry etch process. Angle/energy spectra of ions and fast neutrals can be gained from the model and can be used as input data profile simulation. A simulation study is presented showing several profile phenomena. A short discussion on sidewall protection by polymer deposition and on surface diffusion is included.