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The influence of ion scattering on dry etch profiles

: Pelka, J.; Hoppe, W.; Mewes, D.; Weiß, M.

Journal of vacuum science and technology B. Microelectronics and nanometer structures 7 (1989), No.6, pp.1483-1487
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
EIPB <1989, Monterey>
Conference Paper
Fraunhofer ISIT ()

A simulation study is presented using a new version of the simulation program ADEPT (Advanced simulation of Dry-Etching Process Technology), which is a subset of the process simulator COMPOSITE. Based on some aspects of plasma physics, a model was developed which allows for the calculation of important properties of a collisional sheath by Monte Carlo methods. These properties have a great influence on the anisotropy of a dry etch process. Angle/energy spectra of ions and fast neutrals can be gained from the model and can be used as input data profile simulation. A simulation study is presented showing several profile phenomena. A short discussion on sidewall protection by polymer deposition and on surface diffusion is included.