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The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.

Einfluß ionenstrahlgemischter TiSi2-Schichten auf die Sperrcharakteristik von Dioden
: Zimmermann, H.; Burte, E.P.; Dehm, C.; Gyulai, J.

Journal of applied physics 71 (1992), No.9, pp.4365-4369
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IIS B ( IISB) ()
diode characteristics; Diodencharakteristik; DLTS; ion beam mixing; Ionenstrahlmischen; Silicid; silicide; Titan; titanium

Diodes with shallow p+n junctions were contacted with titanium silicide films which were formed by ion-beam mixing with germanium. The leakage current of these diodes was observed to be dominated by generation mechanism in the space charge layer. Deep level transient spectroscopy and secondary ion mass spectroscopy measurements revealed that ion-beam mixing with heavy ions leads to recoil implantation of titanium atoms into the silicon substrate. The temperature and reverse bias behavior of the leakage current could be consistently explained by Shockley-Read-Hall generation mechanism and by Poole-Frenkel barrier lowering of the double donor level Ti+/++ at Ev+0.26eV.