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Influence of Gamma-L and Gamma-X crossings on stimulated emission in AlxGa1-xAs.

Einfluss der Gamma-L und Gamma-X Überschneidung auf stimulierte Emission in AlxGa1-xAs
 
: Rinker, M.; Kalt, H.; Lu, Y.-C.; Ganser, P.; Köhler, K.

Applied physics. A 53 (1991), pp.198-202 : Abb.,Lit.
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396
English
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; photoluminescence; Photolumineszenz; stimulated emission; stimulierte Emission

Abstract
The dependence of the bandstructure and the resulting dependences of the intensity and the wavelength of stimulated emission on the carrier density are demonstrated in optically excited AlxGa1-xAs near the crossover composition xc at room temperature. Density induced Gamma to L and Gamma to X crossings, based on the large band-gap renormalization near the crossover composition, are observed in samples with an AlAs mole fraction x equal 0.43 and x equal 0.46. The band crossings are indicated by strong fluctuations of the intensity and the wavelength of stimulated emission. This behavior is quantitatively well explained by using a multi-valley model for the description of the band-gap renormalization. The multi-valley model leads to an exact density-dependent prediction of the wavelength and to an estimation of the intensity of stimulated emission in indirect band-gap AlxGa1-xAs and shows the optimum AlAs mole fraction for semiconductor laser application.

: http://publica.fraunhofer.de/documents/PX-18410.html