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Indirect stimulated emission at room temperature

	Applied Physics Letters 57 (1990), No.6, pp.584-586 : Abb.,Lit. ISSN: 0003-6951 ISSN: 1077-3118

	English
	Journal Article
	Fraunhofer IAF ()
	heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; photoluminescence; Photolumineszenz; stimulated emission; stimulierte Emission

Abstract
Stimulated emission in indirect band-gap Al sub chiGa sub 1 - sub ChiAs is observed at room temperature. This indirect stimulated emission is based on alloy disorder induced no-phonon band-to-band transitions. Picosecond luminescence spectroscopy as a function of alloy composition reveals a quadratic dependence of the threshold pump intensity on the energy separation of the renormalized direct and indirect conduction bands. These threshold intensities increase exponentially with lattice temperature. The temperature dependence of the threshold intensity is much weaker than in direct band-gap Al sub ChiGa sub 1 - ChiAs.

: http://publica.fraunhofer.de/documents/PX-18154.html