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Incorporation of SI in delta-doped GaAs studied by local vibrational mode spectroscopy.

Einbau von Si in delta-dotiertem GaAs untersucht mit Hilfe der Spektroskopie lokalisierter Schwingungsmoden
: Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.


Applied Physics Letters 55 (1989), No.10, pp.978-980 : Abb.,Lit.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
delta-doping; Delta-Dotierung; local vibrational modes; lokalisierte Schwingungsmode; raman spectroscopy; Ramanspektroskopie; Si-doped GaAs; Si-dotiertes GaAs

Raman scattering by local vibrational modes has been used to study the incorporation of Si in single delta-doped GaAs layers. Placing the doping spike at different depths underneath the surface, a depth profile of the dopant concentration incorporated on lattice sites has been obtained. For samples grown by molecular beam epitaxy under conditions which are known to lead to a significant broadening of the doping spike, the applied Raman technique reveals the incorporation of Si on Ga sites with a broadening of the Si distribution in excess of 20 nm.