Incorporation of SI in delta-doped GaAs studied by local vibrational mode spectroscopy.

Raman scattering by local vibrational modes has been used to study the incorporation of Si in single delta-doped GaAs layers. Placing the doping spike at different depths underneath the surface, a depth profile of the dopant concentration incorporated on lattice sites has been obtained. For samples grown by molecular beam epitaxy under conditions which are known to lead to a significant broadening of the doping spike, the applied Raman technique reveals the incorporation of Si on Ga sites with a broadening of the Si distribution in excess of 20 nm.