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InAs/(GaIn)Sb superlattices for infrared detection
InAs/(GaIn)Sb-Übergitter zur Detektion infraroter Strahlung
|Chu, S.N.G.; Wada, K.; Pletschen, W.; Van Daele, P.; Buckley, D.N.; Vilcot, J.P.; Decoster, D.; Hou, H.Q. ; Electrochemical Society -ECS-, Electronics Division:|
Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII) 1997. Proceedings
Pennington, NJ: Electrochemical Society, 1997 (Electrochemical Society. Proceedings 97-21)
pp.171-179 : Ill., Lit.
|State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) <27, 1997, Paris>|
Electrochemical Society (Meeting) <192, 1997, Paris>
| Conference Paper|
|Fraunhofer IAF ()|
| InAs/(GaIn)Sb; IR detector; IR-Detektor; superlattice; Übergitter|
We report on the growth and characterization of InAs/(GaIn)Sb superlattices (SLs) as well as on the fabrication and testing of SL infrared (IR) photodiodes. InAs/Ga(0.8)In(0.2)Sb SLs with individual layer thicknesses of 12 and 10 monolayers, respectively, were grown by molecular-beam epitaxy either directly on GaSb substrates or on GaAs substrates using a strain-relaxed GaSb buffer layer. To achieve strain compensation, SL growth was performed with alternating InSb-like and GaAs-like interfaces. IR n-on-p photodiodes employing a strain-optimized InAs/(GaIn)Sb SL as the active region were fabricated using standard III-V technology. SL photodiodes with cut-off wavelengths in the 7.5 to 8.5 mu m wavelength range showed at 77 K responsivities of 2 A/W and R0A products exceeding 10(exp3) ohm cm2.