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InAs/AlSb/GaSb heterostructures are of interest for both fundamental studies and device applications because of the band overlap between InAs and GaSb and the large conduction band offset between InAs and AlSb. This extreme combination of band alignments results in unique physical properties of such heterostructures and allows the realization of, e.g., interband-tunnelling diodes and superlattice (SL) based mid-infrared IR detectors. The structural, optical, and electronic properties of InAs/GaSb SLs and of InAs/AlSb quantum wells will be discussed. Attention will be paid to the dependence of these properties on the type of chemical bonds formed across the InAs/GaSb (InAs/AlSb) heterointerface, which can be either InSb-like or GaAs-like (AlAs-like). Finally, experimental results on InAs/GaSb p-i-n SL photodetectors and InAs/AlSb/GaSb resonant interband-tunnelling diodes will be presented as examples for device applications.