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In situ observation of chemical vapour deposition growth of epitaxial SiGe thin films by reflexion supported pyrometric interferometry

 
: Ritter, G.; Tillack, B.; Weidner, M.; Zaumseil, P.; Böbel, F.G.; Hertel, B.; Möller, H.

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Journal of Crystal Growth 146 (1995), pp.119-124
ISSN: 0022-0248
International Conference on Vapour Growth and Epitaxy <8, 1994, Freiburg>
English
Conference Paper
Fraunhofer IIS A ( IIS) ()
film thickness; Halbleiterfertigungsgerät; in situ process control; in situ-Prozeßkontrolle; measurement; pyrometric interferometry; pyrometrische Interferometrie; Schichtdickenmessung; semiconductor measurement system; temperature measurement; Temperaturmessung

Abstract
Reflexion supported pyrometric interferometry (PYRITTE) has been used for the in-situ observation of Si(1-x)Ge(x) heteroepitaxial growth on Si-wafers in a rapid thermal chemical vapour deposition (RTCVD)-reactor at 500 deg C. The thickness and the optical parameters of thin films at 500 deg C have been evaluated by real time computer fitting of the measured reflectivity data at the wavelength delta = lambda = 650 nm. These parameters have been compared with those obtained ex-situ at room temperature by ellipsometry in the wavelength range 240-700 nm. The thickness of growing Si(1-x)Ge(x) film depends on time linearly. The temperature coefficient of the real part of the refractive index has been found as 3 x 10(exp-4) K(exp-1).

: http://publica.fraunhofer.de/documents/PX-18088.html