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1995
Journal Article
Titel
In situ observation of chemical vapour deposition growth of epitaxial SiGe thin films by reflexion supported pyrometric interferometry
Abstract
Reflexion supported pyrometric interferometry (PYRITTE) has been used for the in-situ observation of Si(1-x)Ge(x) heteroepitaxial growth on Si-wafers in a rapid thermal chemical vapour deposition (RTCVD)-reactor at 500 deg C. The thickness and the optical parameters of thin films at 500 deg C have been evaluated by real time computer fitting of the measured reflectivity data at the wavelength delta = lambda = 650 nm. These parameters have been compared with those obtained ex-situ at room temperature by ellipsometry in the wavelength range 240-700 nm. The thickness of growing Si(1-x)Ge(x) film depends on time linearly. The temperature coefficient of the real part of the refractive index has been found as 3 x 10(exp-4) K(exp-1).