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In-situ measurement of planarization of wafer topography

: Bollmann, D.; Haberger, K.

MIEL 91. 19. Yugosloav Conference on Microelectronics
Yugoslav Conference on Microelectronics <19, 1991, Belgrad>
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3dimensional-ICs; Boron-phosphorus-silicate-glass; BPSG; IC; in-situ; laser; optical nondestroying; planarization; semiconductor; silicon; spin-on-glass; surface measurement

An optical method is described that allows the nondestroying measurement of the quality of planarization used in the fabrication of integrated circuits. A HeNe-laser beam is directed onto the surface of the structured silicon wafer and reflected. The intensity of the diffuse scattered light is used to determine the flatness of the wafer surface.