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  4. In situ boron doping of chemical-vapor-deposited diamond films
 
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1999
Journal Article
Title

In situ boron doping of chemical-vapor-deposited diamond films

Abstract
A systematic investigation of the boron doping of microwave-plasma-deposited diamond films was performed. Doping with levels up to 550 ppm was carried out in situ on undoped diamond film substrates in a microwave-plasma-assisted chemical vapor deposition with liquid trimethyl-, triethyl-, and tripropylborate and gaseous trimethylborane as doping sources. The dependence of the boron incorporation probability on the doping sources and on the process parameters was studied with secondary ion mass spectrometry. The doping-induced variations of phase quality and morphologic characteristics of the boron-doped diamond layers were investigated by means of scanning electron microscopy and Ramon spectroscopy. The incorporation of other impurities (i.e., hydrogen, nitrogen, oxygen, and silicon) were also determined by secondary ion mass spectrometry. The relations of the concentration of these impurities to the boron incorporation were also studied.
Author(s)
Jiang, X.
Willich, P.
Paul, M.
Klages, C.-P.
Journal
Journal of Materials Research  
DOI
10.1557/JMR.1999.0434
Language
English
Fraunhofer-Institut für Schicht- und Oberflächentechnik IST  
Keyword(s)
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