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Improved structural and transport properties of MBE-grown InAs/AlSb QW's with residual As incorporation eliminated via valved cracker

Verbesserung der strukturellen und Transporteigenschaften von MBE-gewachsenen InAs/AlSb QWs durch Unterdrückung des As-Einbaus mit Hilfe einer Ventil-Crackerzelle
 

Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
pp.367-372
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
English
Conference Paper
Fraunhofer IAF ()
antimonide; As-Einbau; As incorporation; In/As/AlSb QW's; MBE; transport property; Transporteigenschaft

Abstract
We examine in detail the improvement in the structural and transport properties of MBE-grown InAs/AlSb quantum wells by utilising a valved cracker cell to inhibit unintentional As incorporation in the antimonide layers. Raman scattering and SIMS measurements reveal that the As content of the antimonide layers depends directly on the background As pressure in the growth chamber. Magneto-transport measurements show increases in electron mobilities from 60,000 to 130,000 qcm/Vs due to the elimination of residual arsenic incorporation in such QW's.

: http://publica.fraunhofer.de/documents/PX-17957.html