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Improved long-term stability of MOS gas sensors using on-chip switched-capacitorreadout techniques

: Dura, H.-G.; Hosticka, B.J.; Mokwa, W.; Schöneberg, U.

3rd International Meeting on Chemical Sensors '90. Proceedings
Cleveland/Ohio: Edison Sensor Technology Center, 1990
International Meeting on Chemical Sensors (IMCS) <3, 1990, Cleveland/Ohio>
Conference Paper
Fraunhofer IMS ()
long-term drift; MOS compatible gas sensor; SC-readout circuits

Despite a long period of more than one decade MOS gas sensors are still suffering from long-term instabilities. We present a new way of overcoming some of the problems by incorporating on-chip analog switched-capacitor circuitry. With this method the DC operating of the sensing devices is avoided and, hence, the sensors exhibit much higherstability. As heating elements and a temperature sensor are included, an external control circuit can maintain a constant operation temperature. Furthermore, the analog switched-capacitor circuits, which are also fully compatible with digital circuit techniques, offer the possibility of providing highly sophisticated signal conditioning and processing on the same silicon chip gas sensing.