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Improved delineation technique for two dimensional dopant profiling

 
: Gong, L.; Petersen, S.; Frey, L.; Ryssel, H.

:

Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 96 (1995), pp.133-138
ISSN: 0168-583X
English
Journal Article
Fraunhofer IIS B ( IISB) ()
chemical delineation; dopant concentration; eqiconcentration lines; two dimensional dopant profiling

Abstract
A chemical delineation technique suitable for two dimensional dopant profiling has been investigated and improved. The formation of equi-concentration lines in p-doped areas during chemical etching due to drastic changes of the etching rate as function of dopant concentration has been studied. Formation of pn-junction, degeneration of the semiconductor, and formation of recombination centers are discussed as possible cause of these changes. In addition, a new etching procedure for delineation of equi-concentration lines in n-doped regions was successfully.

: http://publica.fraunhofer.de/documents/PX-17941.html