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Implementation of models for stress-reduced oxidation into 2-D simulator

Implementierung von Modellen für die spannungsreduzierte Oxidation in einem zweidimensionalen Simulationsprogramm
 
: Seidl, A.; Huber, V.; Rudan, M.; Selberherr, S.; Stippel, H.; Strasser, E.; Lorenz, E.

Baccarani, G.; Rudan, M.; Selberherr, S.; Stippel, H.; Strasser, E.:
SISDEP '88. 3rd International Conference on Simulation of Semiconductor Devices and Processes. Proceedings
Wien: Springer, 1988 (Tecnoprint 3)
pp.277 ff
International Conference on Simulation of Semiconductor Devices and Processes (SISDEP) <3, 1988, Bologna>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()
Halbleitertechnologie; oxidation; Prozeßsimulation; Simulationsprogramm; Spannung; stress

Abstract
Numerical models for local oxidation are usually based on an extension of the Deal-Grove model to two dimensions. However, for technological application a model for stress-reduced oxidation (SRO) is necessary to obtain realistic simulation results. The first approach to a quantitative analysis of this effect was published by Yosikawa which later was extended by Kao. In this work the above-mentioned models are analyzed and tested with respect to their applicability within a numerical simulator. Experimental data were obtained and compared with computer simulation results to check the significance of the related effects. (AIS-B)

: http://publica.fraunhofer.de/documents/PX-17918.html