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Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion

: Feng, S.; Sauerer, J.; Seitzer, D.

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
16th GaAs IC Symposium 1994. Technical Digest
Piscataway, NJ: IEEE, 1994
ISBN: 0-7803-1975-3
GaAs IC Symposium <16, 1994, Philadelphia>
Conference Paper
Fraunhofer IIS A ( IIS) ()
ADC; ADU; Analog-Digital-Umsetzer; analog-to-digital-converter; Gallium Arsenid; gallium arsenide; HEMT; sigma-delta-converter; Sigma-Delta-Umsetzer

The paper presents design considerations and implementation of analog components, including an operational amplifier, latched comparator, 1 bit D/A converter and second.order modulator, for a fully differential delta-sigma modulation oversampling A/D converter in a 0.5 µm GaAs E/D HEMT technology. On-wafer measurements demonstrate that the second-order modulator achieves a 60 dB dynamic range at a Nyquist conversion rate of 5.0 MHz with a sampling frequency of 500 MHz.