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  4. Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te.
 
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1990
Journal Article
Title

Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te.

Other Title
Einfluss von Ionenimplantation auf resonante Ramanstreuung in CdTe und Cd0.23Hg0.77Te
Abstract
We have studied In + implanted CdTe and Cd sub 0.23HG sub 0.77Te by resonant Raman scattering. The laser excitation was in resonance with the E sub 0 + Delta sub 0 band gap in CdTe or the E sub 1 gap in CD sub 0.23HG sub 0.77Te. Under these conditions dipole forbidden but defect induced scattering by one longitudinal optical (LO) phonon as well as Fröhlich-induced two-LO phonon scattering is observed. In both cases scattering is found to be strongly affected by ion implantation. In + was implanted at an ion energy of 350 keV with doses ranging from 10 high 11 to 5x10 high 14ions/square centimetre. The intensity ratio of the one-LO and the two-LO phonon lines is found to be a quantitative measure of the implantation damage in CdTe and Cd sub 0.23Hg sub 0.77Te even for doses as low as 10 high 11ions/square centimetre. It is shown that the observed effects of implantation damage on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding res onances in the Raman scattering efficiency.
Author(s)
Lusson, A.
Bruder, M.
Koidl, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ramsteiner, M.
Wagner, J.
Journal
Journal of Crystal Growth  
DOI
10.1016/0022-0248(90)91056-V
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • CdHgTe

  • CdTe

  • implantation

  • raman scattering

  • Ramanstreuung

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