• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Identification of the BiGa heteroantisite defect in GaAs:Bi
 
  • Details
  • Full
Options
1993
Journal Article
Title

Identification of the BiGa heteroantisite defect in GaAs:Bi

Other Title
Identifizierung des BiGaHetero-Antisite-Defekts in GaAs:Bi
Abstract
GaAS lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been discovered. They are shown to arise from the singly ionized BiGa double donor. Most remarkably, a substantial fraction, about 10 percent, of the total Bi content is found to occupy the Ga site. The BiGa MCD absorption band is tentatively assigned to an exciton deeply bound to the singly ionized double donor BiGa+.
Author(s)
Kunzer, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Jost, W.
Kaufmann, U.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hobgood, H.M.
Thomas, R.N.
Journal
Physical Review. B  
DOI
10.1103/PhysRevB.48.4437
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • antisite

  • antisitedefekt

  • GaAs

  • MCD

  • ODMR

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024