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The hot-carrier light emission for GaAs MESFETs

Lichtemission heißer Ladungsträger aus GaAs - MESFETs
 

Singer, K.E.:
Gallium arsenide and related compounds 1990. Proceedings
Bristol, 1991 (Institute of Physics - Conference Series 112)
ISBN: 0-85498-048-2
pp.231-236 : Abb.,Lit.
International Symposium on Gallium Arsenide and Related Compounds <17, 1990, Jersey>
English
Conference Paper
Fraunhofer IAF ()
Bremsstrahlung; dopant; Dotierung; heißer Ladungsträger; hot carrier; Lichtemission; light emission; MESFET; Monte Carlo methods; spectrum; Spektrum

Abstract
We show that the experimental measurement of the electromagnetic emission spectrum from a MESFET device gives the energy distributions of the carriers. It is argued that radiation originates from Bremsstrahlung emitted as carriers are scattered by dopant impurities. We cite theoretical work that links the spectral distribution of a light with the hot carrier distribution and make a detailed comparison with Monte-Carlo calculations of the device.

: http://publica.fraunhofer.de/documents/PX-17491.html