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Homogeneity of the local carrier lifetime in GaAs solar cells

: Lutz, F.; Louis, T.; Leo, K.; Bett, A.W.

Eighth E.C. Photovoltaic Solar Energy Conference '88. International Conference. Bd.II. Proceedings
Dordrecht: Kluwer Academic Publishers Group, 1988
ISBN: 90-277-2816-X
pp.1331 ff
Photovoltaic Solar Energy Conference <8, 1988, Florenz>
Conference Paper
Fraunhofer ISE ()

The spatial homogeneity of GaAs solar cells was investigated by picosecond luminescence spectroscopy for the first time. The measured standard deviation from the mean lifetime was less than 5 percent indicating a good material homogeneity. Furthermore the importance of the GaAlAs layer for solar cell performance was investigated and the reasons of the different luminescence decay times were discussed. The measurements were performed on GaAs solar cells (eta = 17.8%; AM 1.5) which were produced by a simple isothermal growth method. The electrical and optical properties were determined by EBIC (Electron Beam Induced Current) method, dark current analysis and measurements of the cell parameters. (ISE)