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  4. Homoepitaxial growth of CVD diamond: effect of nitrogen contaminations on growth rates
 
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1996
Book Article
Title

Homoepitaxial growth of CVD diamond: effect of nitrogen contaminations on growth rates

Other Title
Einfluß von Stickstoffverunreinigungen auf die Wachstumsrate homoepitaktischer Diamantschichten
Abstract
Homoepitaxial diamond films were deposited on {100} and {111} oriented substrates using microwave plasma assisted CVD. The growth rate was measured in situ using laser interferometry. Various amounts of (exp 15)N(ind 2) were admixed to the process gas (0-50 ppm). The growth rate on {100} faces was found to increase significantly (by a factor 1.8) with increasing (exp 15)N(ind 2) content. In contrast, on {111} faces only a minor increase of the growth rate upon nitrogen admixture was observed. These findings are in perfect agreement with the observed influence of nitrogen contaminations on the alpha-parameter, as derived by the X-ray texture analysis of polycrystalline diamond films.
Author(s)
Wild, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Locher, R.
Koidl, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Diamond for electronic applications. Symposium Proceedings  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • CVD

  • Diamant

  • diamond

  • Homoepitaxie

  • homoepitaxy

  • Plasmaabscheidung

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