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Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures.

Hoch anisotrope Elektronenbeweglichkeit von GaAs/In0.2Ga0.8As/Al0.3Ga0.7As invertierten HEMT Strukturen
: Schweizer, T.; Rothemund, W.; Ganser, P.; Köhler, K.


Applied Physics Letters 59 (1991), No.21, pp.2736-2738 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
AlGaAs/InGaAs heterostructure; AlGaAs/InGaAs Heterostruktur; anisotrope Elektronenbeweglichkeit; anisotropic electron mobility; asymmetric dislocating density; asymmetrische Versetzungsdichte

Anisotropic electron mobilities for GaAs/Insub0.2Gasub0.8As/Alsub0.3Gasub0.7As inverted high electron mobility transistor structures were observed using Hall effect measurements. If the Insub0.2Gasub0.8As quantum-well thickness is below the critical layer thickness, a higher electron mobility in the (01- 1) direction is observed in comparison to the (011) direction. Exceeding the critical layer thickness of the Insub0.2Gasub0.8As quantum well results in a change in the behavior of the anisotropy, and a highly anisotropic electron mobility with a higher electron mobility in the (011) direction, in comparison to the (01-1) direction, is observed. With increasing Insub0.2Gasub0.8As quantum-well width, the anisotropy increases. An increase of the anisotropy was also observed if the Hall-effect measurements were carried out at lower temperatures. The anisotropy in the electron mobility can be correlated to the occurrence of a highly asymmetric-dislocation density. The asymmetry in the dislo cation density was observed using wavelength-selective catholuminescence measurements.