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High troughput CO2 laser recrystallization for 3D integrated devices

 
: Haberger, K.; Panish, P.; Buchner, R.; Steinberger, H.

Hennig, K.:
EPM '87. Energy Pulse and Particle Beam Modification of Materials
Berlin/West: Akademie-Verlag, 1987 (Physical Research 8)
EPM <1987, Dresden>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; Laserkristallisation; MOS Transistor; Poly-Silizium; SOI

Abstract
A laser recrystallization equipment has been developed using a high power CO2 laser. This system allows full wafer processing using a sweeped-line zone melt system. It has the high energy density required to maintain a temperature differential between the molten polysilicon layer and the substrate, as well as the high throughput rate of a zone processing system. MOS transistors have been fabricated in recrystallized polysilicon layers and characterized through electrical measurements. (IFT)

: http://publica.fraunhofer.de/documents/PX-17197.html