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High speed selfaligned GaInP/GaAs HBBTs.

Schnelle, selbstjustierte GaInP/GaAs HBBTs


Electronics Letters 29 (1993), No.10, pp.868-870 : Abb.,Lit.
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
carbon doping; GaInP/GaAs heterojunction; GaInP/GaAs Heteroübergang; HBBT; HBT; heterojunction bipolar transistor; Kohlenstoffdotierung; microwave device; semiconductor device; semiconductor material

High speed selfaligned Gasub0.5Insub0.5P/GaAs hole barrier bipolar transistors (HBBTs) with a 60 nm carbon doped base layer (p is equal to 6.5 x 10high19 cmhighminus3) and a 20 nm undoped GaInP barrier have been fabricated. The devices show maximum small signal current gains around 30, independent of emitter size. A current gain cutoff frequency of fsubT is equal to 95 GHz and power gain cutoff frequency of fsubmax is equal to 110 GHz are reported for 1.5 x 10 My square meter and 2 x 1.5 x 10 My square meter devices, respectively. These results represent the best microwave performance yet reported for Gasub0.5Insub0.5P/GaAs based HBTs.