Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs
Hochgeschwindigkeitslangwellenlänge monolithisch integrierter Photoempfänger, gewachsen auf GaAs
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Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Windscheif, J.
Abstract
The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 mu m the integrated InGaAs MSM photodiode has a responsivity of 0.32 A/W and the photoreceiver has a -3 dB bandwidth of 16.5 GHz. Clearly-opened eye diagrams for a 20 Gbit/s 1.55 mu m optical data stream have been demonstrated.