High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs

The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 mu m the integrated InGaAs MSM photodiode has a responsivity of 0.32 A/W and the photoreceiver has a -3 dB bandwidth of 16.5 GHz. Clearly-opened eye diagrams for a 20 Gbit/s 1.55 mu m optical data stream have been demonstrated.