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  4. High sensitivity positive tone X-ray resist: RAY-PF performance under e-beam exposure
 
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1989
Journal Article
Title

High sensitivity positive tone X-ray resist: RAY-PF performance under e-beam exposure

Abstract
The suitability of a newly developed X-ray resist for electron beam lithography has been investigated. RAY-PF is a Novolak-based three component system which uses a catalytic reaction to increase the sensitivity. The resist is found to have a high sensitivity of about 10 mu C/cm2 at 50 keV and a very good contrast ( gamma >4). RAY-PF is found to be suitable for high resolution lithography in the 100 nm range.
Author(s)
Menschig, A.
Forchel, A.
Dammel, R.
Lingnau, J.
Pongratz, S.
Scheunemann, U.
Theis, J.
Journal
Microelectronic engineering  
Conference
International Conference on Microlithography: Microcircuit Engineering (ME) 1988  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • electron resists

  • X-ray lithography

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