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High sensitivity positive tone X-ray resist: RAY-PF performance under e-beam exposure

: Menschig, A.; Forchel, A.; Dammel, R.; Lingnau, J.; Pongratz, S.; Scheunemann, U.; Theis, J.

Microelectronic engineering 9 (1989), No.1-4, pp.571-574
ISSN: 0167-9317
International Conference on Microlithography: Microcircuit Engineering (ME) <14, 1988, Wien>
Conference Paper
Fraunhofer ISIT ()
electron resists; X-ray lithography

The suitability of a newly developed X-ray resist for electron beam lithography has been investigated. RAY-PF is a Novolak-based three component system which uses a catalytic reaction to increase the sensitivity. The resist is found to have a high sensitivity of about 10 mu C/cm2 at 50 keV and a very good contrast ( gamma >4). RAY-PF is found to be suitable for high resolution lithography in the 100 nm range.