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High resolution plasma etching with the advanced 200 mm single-wafer multi-chamber equipment MPE 3003
The second phase development of the multi-chamber plasma etching system MPE 3003 is described herein. After a brief review of the design criteria presented last year, we now describe the full implementation of the system into the semiconductor fabrication manufacturing environment. In particular the higher level functions necessary for integration into fully automated production lines have been critically assessed and are now incorporated as standard features. We report on modular installation concepts, clean room compatibility, random-access robotic wafer manipulation for all-vacuum-chamber processing and minimisation of particle generation. The user/operator interface is also defined by menu-driven software with special attention paid to the various options for end-point monitoring and control. In addition, proprietary multi-step etch processes have been developed and characterised in order to make use of the full range of facilities and advanced options currently available.(IMT)