Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. High-quality SOI-substrates for CMOS transistors
| Vacuum 42 (1991), No.5-6, pp.387-388
ISSN: 0042-207X |
| SIMOX Workshop <1, 1988, Surrey> |
|
| English |
| Conference Paper |
| Fraunhofer IMS () |
| devices; SIMOX-substrates; SOI |
Abstract
In this paper CMOS transistors with excellent channel mobilities and very low junction leakage will be described. These devices are produced in high-quality silicon-on-insulator (SOI)-substrates with an implanted buried SiO2 insulator. The properties of the buried oxide and its interfaces will be shown.