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High-quality SOI-substrates for CMOS transistors

: Belz, J.; Burbach, G.; Vogt, H.; Zimmer, G.


Vacuum 42 (1991), No.5-6, pp.387-388
ISSN: 0042-207X
SIMOX Workshop <1, 1988, Surrey>
Conference Paper
Fraunhofer IMS ()
devices; SIMOX-substrates; SOI

In this paper CMOS transistors with excellent channel mobilities and very low junction leakage will be described. These devices are produced in high-quality silicon-on-insulator (SOI)-substrates with an implanted buried SiO2 insulator. The properties of the buried oxide and its interfaces will be shown.