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  4. High-quality SOI-substrates for CMOS transistors
 
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1991
Journal Article
Title

High-quality SOI-substrates for CMOS transistors

Abstract
In this paper CMOS transistors with excellent channel mobilities and very low junction leakage will be described. These devices are produced in high-quality silicon-on-insulator (SOI)-substrates with an implanted buried SiO2 insulator. The properties of the buried oxide and its interfaces will be shown.
Author(s)
Belz, J.
Burbach, G.
Vogt, H.
Zimmer, G.
Journal
Vacuum  
Conference
SIMOX Workshop 1988  
DOI
10.1016/0042-207X(91)90059-R
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • devices

  • SIMOX-substrates

  • SOI

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