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1991
Journal Article
Titel
High-quality SOI-substrates for CMOS transistors
Abstract
In this paper CMOS transistors with excellent channel mobilities and very low junction leakage will be described. These devices are produced in high-quality silicon-on-insulator (SOI)-substrates with an implanted buried SiO2 insulator. The properties of the buried oxide and its interfaces will be shown.
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