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High-power near-diffraction-limited external cavity laser, tunable from 1030 to 1085 nm

Nahezu beugungsbegrenzter Leistungslaser mit externem Resonator, durchstimmbar von 1030 bis 1085 nm

: Morgott, S.; Chazan, P.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G.

DOI: 10.1049/el:19980442

	Electronics Letters 34 (1998), No.6, pp.558-559 : Ill., Lit. ISSN: 0013-5194

	English
	Journal Article
	Fraunhofer IAF ()
	abstimmbarer Laser; external cavity laser; externer Resonator; Halbleiter-Laser; semiconductor laser; tunable laser

Abstract
A tunable external cavity semiconductor laser with > 1 W CW near-diffraction-limited output power between 1030 and 1085 nm is demonstrated. A tapered power amplifier with novel epilayer structure is used as the gain element. Near the gain peak at 1055 nm an output power of 1.6W CW is obtained.

: http://publica.fraunhofer.de/documents/PX-17106.html