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High-power (> 25 W cw) tapered laser bars with high brightness at 980 nm

Hochleistungs-Laserbarren (> 25 W cw) mit trapezförmigen Emittern hoher Brillanz bei 980 nm
 

IEEE Lasers and Electro-Optics Society:
16th IEEE International Semiconductor Laser Conference 1998. Postdeadline papers
S.l.: IEEE, 1998
ISSN: 0899-9406
pp.21-22 : Ill.
International Semiconductor Laser Conference (ISLC) <16, 1998, Nara>
English
Conference Paper
Fraunhofer IAF ()
high-power semiconductor laser; Hochleistungs-Halbleiterlaser; tapered semiconductor laser; Trapez-Halbleiterlaser

Abstract
High-power laser bars comprising 25 tapered emitters have been fabricated. The total output power is higher than 25 W and the average beam quality factor M2 of each individual emitter is 2.18 at 10 W total power.

: http://publica.fraunhofer.de/documents/PX-17097.html