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High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band

Schmal- und Breitbandverstärker mit koplanaren Wellenleitern für V- und W-Band


Institute of Electrical and Electronics Engineers -IEEE-:
15th Annual GaAs IC Symposium 1993. Technical Digest
New York/N.Y.: IEEE, 1993
ISBN: 0-7803-1393-3
ISBN: 0-7803-1394-1
ISBN: 0-7803-1395-X
pp.277-280 : Abb.
GaAs IC Symposium <15, 1993, San Jose/Calif.>
Conference Paper
Fraunhofer IAF ()
CPW-technology; koplanarer Wellenleiter; low-noise amplifier; MODFET; rauscharmer Verstärker

Several millimeter-wave MMICs were fabricated successfully using 0.16 mym pseudomorphic MODFET technology. A 5-stage distributed amplifier has 9.3 dB gain over the frequency range 5 GHz to 80 GHz and a noise figure less than 4.3 dB up to 60 GHz. A narrow band 3-stage low noise amplifier delivers more than 21 dB gain between 70 and 80 GHz. For the first time Cascode transistors in CPW-technology were used for a distributed amplifier achieving a gain bandwidth product of 744 GHz star dB.