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High frequency equivalent circuit of GaAs depletion and enhancement FETs for large signal modelling.

Ein Ersatzschaltbild von GaAs-Feldeffekttransistoren des Anreicherungs- und Verarmungstyps für Modellrechnungen zum Hochfrequenz-Großsignalverhalten
: Berroth, M.; Bosch, R.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
Measurement techniques for microwave device characterization and modelling. Digest of papers
pp.122-127 : Abb.,Lit.
Book Article
Fraunhofer IAF ()
fast parameter extraction; GaAs Feldeffekttransistoren; GaAs-FET; Großsignal-Modellrechnung; high frequency equivalent circuit; Hochfrequenz-Ersatzschaltbild; large signal modelling; schnelle Parameterextraktion

For the design of digital circuits as well as for power amplifiers, the nonlinear modelling of GaAs FETs is a necessity. We use an extended equivalent circuit, which takes into account the gate current of positive biased transistors as well as the symmetrical nature of the devices at low drain voltages. A fast method to determine the elements of the equivalent circuit from measured S-parameters is presented which delivers for the first time good agreement for all operating points. A valid large signal description of the device can be obtained by implementing the bias dependences of the intrinsic elements into a circuit simulator like SPICE.