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High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen

: Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Gyulai, J.; Ryssel, H.


Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 62 (1992), pp.410-415 : Abb.,Lit.
ISSN: 0168-583X
Journal Article
Fraunhofer IIS B ( IISB) ()
dopant profile; high energy ion implantation; lifetime engineering; Monte Carlo methods; two-dimensional dopant profiles

A new high energy ion implanter for research and development in semiconductor technology was put into operation at the Fraunhofer Institute in Erlangen. The system is used for generation of ion beams in the energy range from 100 keV to more than 6 MeV with currents up to 100 MyA. A large variety of ion species can be implanted into silicon wafers with diameters up to 200 mm (with cassette-to-cassette loading up to 150 mm). The performance characteristics of the system are described with special emphasis on the endstations. In a first series of experiments, the range distributions of boron, phosphorus and arsenic in silicon have been measured for energies from 0.2 MeV to 10 MeV in order to get a data set for future applications. The profiles are compared to simulated data. First experimental results on lateral distribution of the dopant species are presented.